Point-defect complexes and broad-band luminesence in GaN and AIN

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors

Date

1997

Department

Department of Applied Physics

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Language

en

Pages

9571-9576

Series

Physical Review B, Volume 55, issue 15

Abstract

We have employed the plane-wave pseudopotential method to study point defect complexes in GaN and AlN. The results reveal that defect complexes consisting of dominant donors bound to cation vacancies are likely to be formed in both materials. The position of the electronic levels in the band gap due to these defect complexes is shown to correlate well with the experimentally commonly observed broadband luminescence both in GaN and in AlN. The origin of the large bandwidth of the luminescence spectrum is discussed.

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Keywords

compound semiconductors, electronic structure, point defects

Other note

DOI

10.1103/PhysRevB.55.9571

Citation

Mattila , T & Nieminen , R M 1997 , ' Point-defect complexes and broad-band luminesence in GaN and AIN ' , Physical Review B , vol. 55 , no. 15 , pp. 9571-9576 . https://doi.org/10.1103/PhysRevB.55.9571

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https://urn.fi/URN:NBN:fi:aalto-201805222305

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[article-cris] Perustieteiden korkeakoulu / SCI