Noise of a single electron transistor on a Si3N4 membrane

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHakonen, Pertti J.
dc.contributor.authorIkonen, J. M.
dc.contributor.authorParts, U.
dc.contributor.authorPenttilä, J. S.
dc.contributor.authorRoschier, L. R.
dc.contributor.authorPaalanen, M. A.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-28T09:01:48Z
dc.date.available2015-09-28T09:01:48Z
dc.date.issued1999
dc.description.abstractWe have investigated the influence of electron-beam writing on the creation of charge trapping centers which cause 1/f noise in single electron transistors (SET). Two Al/AlOx/Al devices were compared: one where the SET is on a {100} silicon wafer covered by a 120-nm-thick layer of Si3N4, and another one in which the Si was etched away from below the nitride membrane before patterning the SET. The background charge noise was found to be 1×10 exp −3 e/√Hz at 10 Hz in both devices, independent of the substrate thickness.en
dc.description.versionPeer revieweden
dc.format.extent2684-2686
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHakonen, Pertti J. & Ikonen, J. M. & Parts, U. & Penttilä, J. S. & Roschier, L. R. & Paalanen, M. A.. 1999. Noise of a single electron transistor on a Si3N4 membrane. Journal of Applied Physics. Volume 86, Issue 5. 2684-2686. ISSN 0021-8979 (printed). DOI: 10.1063/1.371110.en
dc.identifier.doi10.1063/1.371110
dc.identifier.issn0021-8979 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17891
dc.identifier.urnURN:NBN:fi:aalto-201509284482
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 86, Issue 5
dc.rights© 1999 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 86, Issue 5 and may be found at http://scitation.aip.org/content/aip/journal/jap/86/5/10.1063/1.371110.en
dc.rights.holderAIP Publishing
dc.subject.keywordnoiseen
dc.subject.keywordsingle electron transistorsen
dc.subject.keywordSi3N4 membraneen
dc.subject.otherPhysicsen
dc.titleNoise of a single electron transistor on a Si3N4 membraneen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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