Evolution of vacancy-related defects upon annealing of ion-implanted germanium
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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5
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Physical Review B, Volume 78, issue 8, pp. 1-5
Abstract
Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 cm−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×1013 cm−2 and a fluence of 1×1014 cm−2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Description
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Slotte, J, Rummukainen, M, Tuomisto, F, Markevich, V P, Peaker, A R, Jeynes, C & William, R 2008, 'Evolution of vacancy-related defects upon annealing of ion-implanted germanium', Physical Review B, vol. 78, no. 8, 085202, pp. 1-5. https://doi.org/10.1103/PhysRevB.78.085202