Evolution of vacancy-related defects upon annealing of ion-implanted germanium
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2008-08
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Language
en
Pages
5
1-5
1-5
Series
Physical Review B, Volume 78, issue 8
Abstract
Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 cm−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×1013 cm−2 and a fluence of 1×1014 cm−2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Description
Keywords
Ge, ion implantation, positron
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Citation
Slotte , J , Rummukainen , M , Tuomisto , F , Markevich , V P , Peaker , A R , Jeynes , C & William , R 2008 , ' Evolution of vacancy-related defects upon annealing of ion-implanted germanium ' , Physical Review B , vol. 78 , no. 8 , 085202 , pp. 1-5 . https://doi.org/10.1103/PhysRevB.78.085202