Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1997-02-15
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Language
en
Pages
4
4473-4476
Series
PHYSICAL REVIEW B, Volume 55, issue 7
Abstract
Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.
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Keywords
carrier relaxation dynamics, quantum dots
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Citation
Grosse , S , Sandman , J , von Plessen , G , Feldman , J , Lipsanen , H , Sopanen , M , Tulkki , J & Ahopelto , J 1997 , ' Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects ' , Physical Review B , vol. 55 , no. 7 , pp. 4473-4476 . https://doi.org/10.1103/PhysRevB.55.4473