AlxGa1-xAs-HEMT:n Valmistus ja Karakterisointi
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Sirén, Esko | |
dc.contributor.department | Sähkötekniikan osasto | fi |
dc.contributor.school | Teknillinen korkeakoulu | fi |
dc.contributor.school | Helsinki University of Technology | en |
dc.contributor.supervisor | Sinkkonen, Juha | |
dc.date.accessioned | 2021-04-14T14:31:26Z | |
dc.date.available | 2021-04-14T14:31:26Z | |
dc.date.issued | 1994 | |
dc.format.extent | 76 | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/105386 | |
dc.identifier.urn | URN:NBN:fi:aalto-202104144676 | |
dc.language.iso | fi | en |
dc.programme.major | Elektronifysiikka | fi |
dc.programme.mcode | S-69 | fi |
dc.rights.accesslevel | closedAccess | |
dc.subject.keyword | GaAs | en |
dc.subject.keyword | GaAs | fi |
dc.subject.keyword | AlxGa1-xAs | en |
dc.subject.keyword | AlxGa1-xAs | fi |
dc.subject.keyword | HEMT | en |
dc.subject.keyword | HEMT | fi |
dc.subject.keyword | MODFET | en |
dc.subject.keyword | MODFET | fi |
dc.subject.keyword | TEGFET | en |
dc.subject.keyword | TEGFET | fi |
dc.subject.keyword | RIE | en |
dc.subject.keyword | RIE | fi |
dc.subject.keyword | dry etching | en |
dc.subject.keyword | kuivaetsaus | fi |
dc.subject.keyword | plasma etching | en |
dc.subject.keyword | plasmaetsaus | fi |
dc.title | AlxGa1-xAs-HEMT:n Valmistus ja Karakterisointi | fi |
dc.title | Fabrication and Characterization of an AlxGa1-xAs-HEMT | en |
dc.type.okm | G3 Lisensiaatintutkimus | |
dc.type.ontasot | Licentiate thesis | en |
dc.type.ontasot | Lisensiaatintyö | fi |
local.aalto.digiauth | ask | |
local.aalto.digifolder | Aalto_40099 | |
local.aalto.idinssi | 9678 | |
local.aalto.openaccess | no |