Microscopic structure of oxygen defects in gallium arsenide

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorPesola, M.
dc.contributor.authorBoehm, J. von
dc.contributor.authorSammalkorpi, V.
dc.contributor.authorMattila, T.
dc.contributor.authorNieminen, Risto M.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-08-12T09:01:18Z
dc.date.available2015-08-12T09:01:18Z
dc.date.issued1999
dc.description.abstractAccurate total-energy pseudopotential methods are used to study the structures, binding energies, and local vibrational modes of various models for the Ga-O-Ga defect in GaAs. We find that the previously proposed models, OAs (an off-centered substitutional oxygen in arsenic vacancy) and OI (an oxygen atom occupying a tetrahedral interstitial site), are inconsistent with experimental data. We introduce a model, (AsGa)2−OAs (two arsenic antisites and one off-centered substitutional oxygen in arsenic vacancy), the properties of which are in excellent agreement with experimental characterizations.en
dc.description.versionPeer revieweden
dc.format.extentR16267-R16270
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPesola, M. & Boehm, J. von & Sammalkorpi, V. & Mattila, T. & Nieminen, Risto M. 1999. Microscopic structure of oxygen defects in gallium arsenide. Physical Review B. Volume 60, Issue 24. R16267-R16270. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.r16267.en
dc.identifier.doi10.1103/physrevb.60.r16267
dc.identifier.issn1550-235X (electronic)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17383
dc.identifier.urnURN:NBN:fi:aalto-201508113995
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 60, Issue 24
dc.rights© 1999 American Physical Society (APS). This is the accepted version of the following article: Pesola, M. & Boehm, J. von & Sammalkorpi, V. & Mattila, T. & Nieminen, Risto M. 1999. Microscopic structure of oxygen defects in gallium arsenide. Physical Review B. Volume 60, Issue 24. R16267-R16270. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.r16267, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.R16267.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordGaAsen
dc.subject.keywordoxygen defectsen
dc.subject.keywordstructuresen
dc.subject.keywordbinding energiesen
dc.subject.keywordlocal vibrational modesen
dc.subject.otherPhysicsen
dc.titleMicroscopic structure of oxygen defects in gallium arsenideen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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