High performance predictable quantum efficient detector based on induced-junction photodiodes passivated with SiO2/SinX
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
2021-12-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
18
Series
Sensors, Volume 21, issue 23
Abstract
We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon-dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.Description
Funding Information: Funding: This project (18SIB10 chipS.CALe) received funding from the EMPIR program co-financed by the Participating States and from the European Union’s Horizon 2020 research and innovation program. This research was funded, in part, by The Research Council of Norway (Tildeling av grunnbevilgning for 2021—prosjektnr. 194068/F40). A CC BY or equivalent license is applied to any author accepted manuscript (AAM) version arising from this submission, in accordance with the grant’s open access conditions. Authors of Aalto University acknowledge the funding by the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), decision number: 320167. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
Induced-junction, Inversion layer photodiode, Optical power, PECVD silicon nitride, Predictable quantum efficiency, Primary standard, Radiometry, Silicon photodetector, Surface passivation
Other note
Citation
Koybasi, O, Nordseth, Ø, Tran, T, Povoli, M, Rajteri, M, Pepe, C, Bardalen, E, Manoocheri, F, Summanwar, A, Korpusenko, M, Getz, M N, Ohlckers, P, Ikonen, E & Gran, J 2021, ' High performance predictable quantum efficient detector based on induced-junction photodiodes passivated with SiO 2 /SinX ', Sensors, vol. 21, no. 23, 7807 . https://doi.org/10.3390/s21237807