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Point defects in proton-irradiated highly Ga- and B-doped Ge
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Journal of Applied Physics, Volume 139, issue 1
Abstract
In this study, point defects in highly Ga- and B-doped Ge bulk crystalline samples were investigated using Positron Annihilation Lifetime Spectroscopy. The samples were irradiated with 6MeV protons at room temperature up to a fluence of 3 × 10 14 cm − 2 in order to produce vacancy-type defects along the ion track. Initially after irradiation, vacancy-dopant complexes are observed in all samples. However, measurements performed a year after irradiation suggest evolution of the defects, indicating a low binding energy between the vacancy and the dopants. An increase in the size of the vacancy-type defects is observed with increasing dopant concentration in the 5 × 10 17-, 1 × 10 18-, and 1 × 10 19 cm − 3-doped samples. Interestingly, the defect lifetime component for the 1 × 10 20 cm − 3 Ga-doped sample is significantly lower than in the less-doped samples, which is concluded to be a result of a high concentration of negative ions complicating decomposition of the spectra. Temperature-dependent measurements show evidence in support of this conclusion, while also observing an abnormal positron annihilation state characterized by a lifetime below that in defect-free bulk.
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Amoroso, P, Slotte, J, Subramanian, A, Särs, W, Mizohata, K, Radhakrishnan Sumathi, R & Tuomisto, F 2026, 'Point defects in proton-irradiated highly Ga- and B-doped Ge', Journal of Applied Physics, vol. 139, no. 1, 015703. https://doi.org/10.1063/5.0305060