Internal quantum efficiency of silicon photodetectors at ultraviolet wavelengths
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2023-10-01
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en
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Metrologia, Volume 60, issue 5
Abstract
We determine experimentally the internal quantum efficiency of a 3-element trap detector made of Hamamatsu S1337 photodiodes and of a predictable quantum efficient detector (PQED) over the wavelength range of 250-500 nm using an electrically calibrated pyroelectric radiometer as reference detector. The PQED is made of specially designed induced junction photodiodes, whose charge-carrier recombination losses are minimized. The determined internal quantum efficiency of PQED is always 1 or larger, whereas the 3-element trap detector has internal quantum efficiency smaller than 1 in the spectral range of 330-450 nm. This finding demonstrates the advantages of PQED photodiodes for studying the quantum yield due to impact ionization by charge carriers in the silicon lattice. For this purpose, we develop an extrapolation model for the charge-carrier recombination losses of the PQED, which allows us to separate the quantum yield from the measured internal quantum efficiency. Measurements of PQED spectral responsivity thus allow to determine the quantum yield in silicon, which can be further used for quantifying the charge-carrier recombination losses in the 3-element trap detector. Numerical values of the latter are from 6% to 2% in the spectral range from 250 nm to 380 nm. Finally, our results are encouraging for the aim of developing the PQED to a primary detector standard also at ultraviolet wavelengths.Description
Funding Information: Projects 18SIB10 Chipscale and 22IEM06 ScaleUp leading to this publication have received funding from the EMPIR program and from the European Partnership on Metrology, respectively, co-financed by the participating states and the European Union’s Horizon 2020 and Horizon Europe research and innovation programmes. We also acknowledge support by the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), Decision Number 320167. Publisher Copyright: © 2023 The Author(s). Published on behalf of BIPM by IOP Publishing Ltd.
Keywords
induced junction, predictable quantum efficient detector, quantum yield, recombination losses, silicon photodiode, ultraviolet responsivity
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Korpusenko, M, Vaskuri, A, Manoocheri, F & Ikonen, E 2023, ' Internal quantum efficiency of silicon photodetectors at ultraviolet wavelengths ', Metrologia, vol. 60, no. 5, 055010 . https://doi.org/10.1088/1681-7575/acf5f0