Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Børseth, T. Moe | |
dc.contributor.author | Tuomisto, Filip | |
dc.contributor.author | Christensen, J. S. | |
dc.contributor.author | Skorupa, W. | |
dc.contributor.author | Monakhov, E. V. | |
dc.contributor.author | Svensson, B. G. | |
dc.contributor.author | Kuznetsov, A. Yu. | |
dc.contributor.department | Teknillisen fysiikan laitos | fi |
dc.contributor.department | Department of Applied Physics | en |
dc.contributor.school | Perustieteiden korkeakoulu | fi |
dc.contributor.school | School of Science | en |
dc.date.accessioned | 2015-09-02T09:02:51Z | |
dc.date.available | 2015-09-02T09:02:51Z | |
dc.date.issued | 2006 | |
dc.description.abstract | Li is present in hydrothermally grown ZnO at high concentrations and is known to compensate both n- and p-type doping due to its amphoteric nature. However, Li can be manipulated by annealing and ion implantation in ZnO. Fast, 20 ms flash anneals in the 900–1400°C range result in vacancy cluster formation and, simultaneously, a low-resistive layer in the implanted part of the He- and Li-implanted ZnO. The vacancy clusters, involving 3-4 Zn vacancies, trap and deactivate Li, leaving other in-grown donors to determine the electrical properties. Such clusters are not present in sufficient concentrations after longer (1h) anneals because of a relatively low dissociation barrier ∼2.6 ± 0.3 eV, so ZnO remains compensated until Li diffuses out after 1250°C anneals. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 161202/1-4 | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Børseth, T. Moe & Tuomisto, Filip & Christensen, J. S. & Skorupa, W. & Monakhov, E. V. & Svensson, B. G. & Kuznetsov, A. Yu. 2006. Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO. Physical Review B. Volume 74, Issue 16. 161202/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.74.161202 | en |
dc.identifier.doi | 10.1103/physrevb.74.161202 | |
dc.identifier.issn | 1098-0121 (printed) | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/17571 | |
dc.identifier.urn | URN:NBN:fi:aalto-201509024189 | |
dc.language.iso | en | en |
dc.publisher | American Physical Society (APS) | en |
dc.relation.ispartofseries | Physical Review B | en |
dc.relation.ispartofseries | Volume 74, Issue 16 | |
dc.rights | © 2006 American Physical Society (APS). This is the accepted version of the following article: Børseth, T. Moe & Tuomisto, Filip & Christensen, J. S. & Skorupa, W. & Monakhov, E. V. & Svensson, B. G. & Kuznetsov, A. Yu. 2006. Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO. Physical Review B. Volume 74, Issue 16. 161202/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.74.161202, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.74.161202. | en |
dc.rights.holder | American Physical Society (APS) | |
dc.subject.keyword | lithium | en |
dc.subject.keyword | deactivation | en |
dc.subject.keyword | ZnO | en |
dc.subject.keyword | vacancy cluster | en |
dc.subject.other | Physics | en |
dc.title | Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.dcmitype | text | en |
dc.type.version | Final published version | en |
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