Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorBørseth, T. Moe
dc.contributor.authorTuomisto, Filip
dc.contributor.authorChristensen, J. S.
dc.contributor.authorSkorupa, W.
dc.contributor.authorMonakhov, E. V.
dc.contributor.authorSvensson, B. G.
dc.contributor.authorKuznetsov, A. Yu.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-02T09:02:51Z
dc.date.available2015-09-02T09:02:51Z
dc.date.issued2006
dc.description.abstractLi is present in hydrothermally grown ZnO at high concentrations and is known to compensate both n- and p-type doping due to its amphoteric nature. However, Li can be manipulated by annealing and ion implantation in ZnO. Fast, 20 ms flash anneals in the 900–1400°C range result in vacancy cluster formation and, simultaneously, a low-resistive layer in the implanted part of the He- and Li-implanted ZnO. The vacancy clusters, involving 3-4 Zn vacancies, trap and deactivate Li, leaving other in-grown donors to determine the electrical properties. Such clusters are not present in sufficient concentrations after longer (1h) anneals because of a relatively low dissociation barrier ∼2.6 ± 0.3 eV, so ZnO remains compensated until Li diffuses out after 1250°C anneals.en
dc.description.versionPeer revieweden
dc.format.extent161202/1-4
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBørseth, T. Moe & Tuomisto, Filip & Christensen, J. S. & Skorupa, W. & Monakhov, E. V. & Svensson, B. G. & Kuznetsov, A. Yu. 2006. Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO. Physical Review B. Volume 74, Issue 16. 161202/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.74.161202en
dc.identifier.doi10.1103/physrevb.74.161202
dc.identifier.issn1098-0121 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17571
dc.identifier.urnURN:NBN:fi:aalto-201509024189
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 74, Issue 16
dc.rights© 2006 American Physical Society (APS). This is the accepted version of the following article: Børseth, T. Moe & Tuomisto, Filip & Christensen, J. S. & Skorupa, W. & Monakhov, E. V. & Svensson, B. G. & Kuznetsov, A. Yu. 2006. Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO. Physical Review B. Volume 74, Issue 16. 161202/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.74.161202, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.74.161202.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordlithiumen
dc.subject.keyworddeactivationen
dc.subject.keywordZnOen
dc.subject.keywordvacancy clusteren
dc.subject.otherPhysicsen
dc.titleDeactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnOen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
A1_børseth_t_moe_2006.pdf
Size:
639.22 KB
Format:
Adobe Portable Document Format