Periodicity in Al/Ti superconducting single electron transistors
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© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://scitation.aip.org/content/aip/journal/apl/95/5/10.1063/1.3194777
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Journal ISSN
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2009
Major/Subject
Mcode
Degree programme
Language
en
Pages
052503/1-3
Series
Applied Physics Letters, Volume 95, Issue 5
Abstract
We present experiments on single Cooper-pair transistors made of two different superconducting materials. We chose Ti and Al to create an energy gap profile such that the island has a higher gap than the leads, thereby acting as a barrier to quasiparticletunneling. Our transport measurements demonstrate that quasiparticle poisoning is suppressed in all our TiAlTi structures (higher gap for the island) with clear 2e periodicity observed, whereas full quasiparticle poisoning is observed in all AlTiAl devices (higher gap for the leads) with e periodicity.Description
Keywords
aluminium alloys, energy gap, quasiparticles, single electron transistors, superconducting materials, titanium alloys, tunneling, lead, superconductivity
Other note
Citation
MacLeod, Sarah J. & Kafanov, Sergey & Pekola, Jukka. 2009. Periodicity in Al/Ti superconducting single electron transistors. Applied Physics Letters. Volume 95, Issue 5. P. 052503/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3194777.