Hyperdoping-regulated room-temperature NO2 gas sensing performances of black silicon based on lateral photovoltaic effect

dc.contributorAalto Universityen
dc.contributor.authorWang, Wenjingen_US
dc.contributor.authorLi, Huaen_US
dc.contributor.authorLiu, Xiaolongen_US
dc.contributor.authorMa, Shengxiangen_US
dc.contributor.authorZhao, Yangen_US
dc.contributor.authorDong, Binbinen_US
dc.contributor.authorLi, Yuanen_US
dc.contributor.authorNing, Xijingen_US
dc.contributor.authorZhao, Lien_US
dc.contributor.authorZhuang, Junen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHele Savin Groupen
dc.contributor.organizationFudan Universityen_US
dc.description.abstractBlack silicon co-hyperdoped with sulfur and nitrogen in different ratios is prepared by femtosecond laser-assisted chemical etching in the mixed atmosphere of SF6 and NF3 with varying gas pressure ratios. Their room-temperature NO2 gas sensing capability is studied systematically, in which the photocurrent as a readout signal is generated by the lateral photovoltaic effect of black silicon under an asymmetrical light illumination. These co-hyperdoped black silicon exhibits high response, fast response/recovery, ultrawide detection range from 29 ppb to 2000 ppm, excellent selectivity and acceptable long-term durability over 3 months. Moreover, NO2 gas sensing performances are effectively tuned or optimized by deliberately changing the co-doping ratio of sulfur and nitrogen, as different photovoltaic characteristics are induced by changes in morphology and structural defects resulting from different hyperdoping. Specifically, ultra-high relative gas response (~3955%@20 ppm NO2) and superior selectivity are obtained at the SF6/NF3 pressure ratio of 56/14, while faster response/recovery time (17 s/ 47 s@20 ppm NO2) and response photocurrent with a weaker disturbance by humidity are given by the samples with SF6/NF3 of 7/63 and 63/7, respectively. Therefore, such black silicon material has good potential to meet different application needs.en
dc.description.versionPeer revieweden
dc.identifier.citationWang, W, Li, H, Liu, X, Ma, S, Zhao, Y, Dong, B, Li, Y, Ning, X, Zhao, L & Zhuang, J 2023, ' Hyperdoping-regulated room-temperature NO2 gas sensing performances of black silicon based on lateral photovoltaic effect ', Sensors and Actuators B: Chemical, vol. 382, 133473 . https://doi.org/10.1016/j.snb.2023.133473en
dc.identifier.otherPURE UUID: 3609a17b-aee0-4857-8c67-020ad4b1ca2fen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/3609a17b-aee0-4857-8c67-020ad4b1ca2fen_US
dc.relation.ispartofseriesSensors and Actuators B: Chemicalen
dc.relation.ispartofseriesVolume 382en
dc.subject.keywordblack siliconen_US
dc.subject.keywordNO2 gas sensoren_US
dc.subject.keywordhyperdoping regulationen_US
dc.subject.keywordgas sensing performanceen_US
dc.subject.keywordlateral photovoltaic effecten_US
dc.titleHyperdoping-regulated room-temperature NO2 gas sensing performances of black silicon based on lateral photovoltaic effecten
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi