Atomic Layer Deposition of Copper Metal Films from Cu(acac)2 and Hydroquinone Reductant

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-10
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
Series
Advanced Engineering Materials, Volume 23, issue 10
Abstract
High-quality copper metal thin films are demanded for a number of advanced technologies. Herein, a facile ALD (atomic layer deposition) process for the fabrication of Cu metal films directly from two solid readily usable precursors, copper acetylacetonate as the source of copper and hydroquinone as the reductant is reported. This process yields highly crystalline, dense, specularly reflecting, and electrically conductive Cu films with an appreciably high growth rate of 1.8 Å/cycle at deposition temperatures as low as 160 to 240 °C.
Description
Funding Information: The authors acknowledge the use of the Circular Raw MatTERS Finland Infrastructure (RAMI) at Aalto University. The authors at RUB and Paderborn University thank the SFB‐TR‐87 project for financial support. M.W. thanks COST‐Action HERALD for funding his research stay at Aalto University. Publisher Copyright: © 2021 The Authors. Advanced Engineering Materials published by Wiley-VCH GmbH
Keywords
ALD, Copper metal film, Cu(acac), Direct reduction, Hydroquinone
Other note
Citation
Tripathi , T S , Wilken , M , Hoppe , C , de los Arcos , T , Grundmeier , G , Devi , A & Karppinen , M 2021 , ' Atomic Layer Deposition of Copper Metal Films from Cu(acac) 2 and Hydroquinone Reductant ' , Advanced Engineering Materials , vol. 23 , no. 10 , 2100446 . https://doi.org/10.1002/adem.202100446