Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films
Loading...
Access rights
© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 90, Issue 15 and may be found at http://scitation.aip.org/content/aip/journal/apl/90/15/10.1063/1.2721132.
URL
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
151908/1-3
Series
Applied Physics Letters, Volume 90, Issue 15
Abstract
The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10exp−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510 nm.Description
Keywords
vacancies, positron annihilation, AlGaN, optical properties, photoluminescence
Other note
Citation
Slotte, J. & Tuomisto, Filip & Saarinen, K. & Moe, C. G. & Keller, S. & DenBaars, S. P. 2007. Influence of silicon doping on vacancies and optical properties of Al[sub x]Ga[sub 1-x]N thin films. Applied Physics Letters. Volume 90, Issue 15. 151908/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2721132