Surface plasmon effects on carbon nanotube field effect transistors

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorIsoniemi, T.
dc.contributor.authorJohansson, A.
dc.contributor.authorHakala, T.K.
dc.contributor.authorRinkiö, M.
dc.contributor.authorTörmä, P.
dc.contributor.authorToppari, J.J.
dc.contributor.authorKunttu, H.
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorQuantum Dynamicsen
dc.contributor.organizationUniversity of Jyväskylä
dc.date.accessioned2016-09-08T06:33:21Z
dc.date.issued2011
dc.description.abstractHerein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotubefield effect transistor(CNTFET). SPP excitation is done via Kretschmann configuration while the measured CNTFET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of ∼0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range.en
dc.description.versionPeer revieweden
dc.format.extent3
dc.format.mimetypeapplication/pdf
dc.identifier.citationIsoniemi, T, Johansson, A, Hakala, T K, Rinkiö, M, Törmä, P, Toppari, J J & Kunttu, H 2011, 'Surface plasmon effects on carbon nanotube field effect transistors', Applied Physics Letters, vol. 99, no. 3, 031105, pp. 1-3. https://doi.org/10.1063/1.3614543en
dc.identifier.doi10.1063/1.3614543
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: 7ff7d891-d7b7-4b60-945a-5405838ee6fe
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/7ff7d891-d7b7-4b60-945a-5405838ee6fe
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/2226893/1.3614543.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/21855
dc.identifier.urnURN:NBN:fi:aalto-201609083321
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 99, issue 3, pp. 1-3en
dc.rightsopenAccessen
dc.subject.keywordcarbon nanotubes
dc.subject.keywordnanoscience
dc.subject.keywordplasmonics
dc.titleSurface plasmon effects on carbon nanotube field effect transistorsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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