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Surface plasmon effects on carbon nanotube field effect transistors
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 99, issue 3, pp. 1-3
Abstract
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotubefield effect transistor(CNTFET). SPP excitation is done via Kretschmann configuration while the measured CNTFET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of ∼0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range.
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Isoniemi, T, Johansson, A, Hakala, T K, Rinkiö, M, Törmä, P, Toppari, J J & Kunttu, H 2011, 'Surface plasmon effects on carbon nanotube field effect transistors', Applied Physics Letters, vol. 99, no. 3, 031105, pp. 1-3. https://doi.org/10.1063/1.3614543