Simulating atomic force microscopy imaging of the ideal and defected TiO2 (110) surface
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© 2003 American Physical Society (APS). This is the accepted version of the following article: Foster, A. S. & Pakarinen, O. H. & Airaksinen, J. M. & Gale, J. D. & Nieminen, Risto M. 2003. Simulating atomic force microscopy imaging of the ideal and defected TiO2 (110) surface. Physical Review B. Volume 68, Issue 19. 195410-1-8. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.68.195410, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.68.195410.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2003
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Language
en
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195410-1-8
Series
Physical Review B, Volume 68, Issue 19
Abstract
In this study we simulate noncontact atomic force microscopy imaging of the TiO2 (110) surface using first-principles and atomistic methods. We use three different tip models to investigate the tip-surface interaction on the ideal surface, and find that agreement with experiment is found for either a silicon tip or a tip with a net positive electrostatic potential from the apex. Both predict bright contrast over the bridging oxygen rows. We then study the interaction of this tip with a bridging oxygen vacancy on the surface, and find that the much weaker interaction observed would result in vacancies appearing as dark contrast along the bright rows in images.Description
Keywords
atomic force microscopy, tip-surface interactions, silicon, oxygen
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Citation
Foster, A. S. & Pakarinen, O. H. & Airaksinen, J. M. & Gale, J. D. & Nieminen, Risto M. 2003. Simulating atomic force microscopy imaging of the ideal and defected TiO2 (110) surface. Physical Review B. Volume 68, Issue 19. 195410-1-8. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.68.195410.