Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Gettering

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2017-06-10

Department

Department of Micro and Nanosciences
Department of Electronics and Nanoengineering

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Mcode

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Language

en

Pages

6

Series

Advanced Electronic Materials, Volume 3, issue 6

Abstract

Quasi-mono silicon (QM-Si) attracts interest as a substrate material for silicon device processing with the promise to yield single-crystalline silicon quality with multicrystalline silicon cost. A significant barrier to widespread implementation of QM-Si is ingot edge-contamination caused by the seed material and crucible walls during crystal growth. This work aims to recover the scrap material in QM-Si manufacturing with a process easily adaptable to semiconductor device manufacturing. A phosphorus diffusion process at 870 °C for 60 min significantly improves the electronic quality of a QM-Si wafer cut from a contaminated edge brick. The harmonic minority carrier recombination lifetime of the wafer, a key predictor of ultimate device performance, experiences a tenfold increase from 17 to 178 μs, which makes the scrap QM-Si material usable for device fabrication. Local areas with suboptimal (<50 μs) lifetimes remaining can be further improved by a high temperature anneal before the phosphorus diffusion process.

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Keywords

Defect engineering, Minority charge carrier lifetime, Quasi-mono silicon, Silicon

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DOI

10.1002/aelm.201600435

Citation

Liu, Z, Vähänissi, V, Laine, H S, Lindeberg, M, Yli-Koski, M & Savin, H 2017, 'Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Gettering', Advanced Electronic Materials, vol. 3, no. 6, 1600435. https://doi.org/10.1002/aelm.201600435

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https://urn.fi/URN:NBN:fi:aalto-201806183300

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[article-cris] Sähkötekniikan korkeakoulu / ELEC