Dynamics of Bloch oscillating transistor near the bifurcation threshold
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© 2013 American Physical Society (APS). This is the accepted version of the following article: Sarkar, Jayanta & Puska, Antti & Hassel, Juha & Hakonen, Pertti J. 2013. Dynamics of Bloch oscillating transistor near the bifurcation threshold. Physical Review B. Volume 87, Issue 22. 224514/1-11. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.87.224514, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.87.224514.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013
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Mcode
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Language
en
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224514/1-11
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Physical Review B, Volume 87, Issue 22
Abstract
The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy EJ of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small EJ. From our results for the current gains at various EJ, we determine the bifurcation threshold on the EJ-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.Description
Keywords
ultrasmall Josephson-junctions, normal tunnel-junctions, Coulomb-blockade, transitions, noise, environment, amplifier, coherent
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Citation
Sarkar, Jayanta & Puska, Antti & Hassel, Juha & Hakonen, Pertti J. 2013. Dynamics of Bloch oscillating transistor near the bifurcation threshold. Physical Review B. Volume 87, Issue 22. 224514/1-11. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.87.224514