Band offsets at the GaInP/GaAs heterojunction
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© 1997 American Institute of Physics. This is the accepted version of the following article: Lindell, A. & Pessa, M. & Salokatve, A. & Bernardini, F. & Nieminen, Risto M. & Paalanen, M. 1997. Band offsets at the GaInP/GaAs heterojunction. Journal of Applied Physics. Volume 82, Issue 7. 3374-3380. ISSN 0021-8979 (printed). DOI: 10.1063/1.365650, which has been published in final form at http://scitation.aip.org/content/aip/journal/jap/82/7/10.1063/1.365650.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1997
Major/Subject
Mcode
Degree programme
Language
en
Pages
3374-3380
Series
Journal of Applied Physics, Volume 82, Issue 7
Abstract
We have measured current–voltage curves and the temperature dependence of the zero bias conductance for a p -type Be-doped GaInP/GaAs heterojunction grown by the molecular beam epitaxy method. We have determined the valence band offset ΔEν from both measurements and find it to be 310 meV within 5% of accuracy. Similarly, we find for an n -type Si-doped sample that the conduction band offset ΔEC is 95 meV. First-principles calculations have been carried out for the atomic and electronic structures of the interfaces. For the thermodynamically favored interfaces, the valence band offset is found not to be sensitive to atomic relaxations at the interface. The calculated values are in good agreement with the experiments.Description
Keywords
interface thermodynamics, heterojunctions, valence bands
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Citation
Lindell, A. & Pessa, M. & Salokatve, A. & Bernardini, F. & Nieminen, Risto M. & Paalanen, M. 1997. Band offsets at the GaInP/GaAs heterojunction. Journal of Applied Physics. Volume 82, Issue 7. 3374-3380. ISSN 0021-8979 (printed). DOI: 10.1063/1.365650.
