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Near-infrared germanium PIN-photodiodes with >1A/W responsivity
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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Light: Science & Applications, Volume 14, issue 1
Abstract
Even though efficient near-infrared (NIR) detection is critical for numerous applications, state-of-the-art NIR detectors either suffer from limited capability of detecting incoming photons, i.e., have poor spectral responsivity, or are made of expensive group III-V non-CMOS compatible materials. Here we present a nanoengineered PIN-photodiode made of CMOS-compatible germanium (Ge) that achieves a verified external quantum efficiency (EQE) above 90% over a wide wavelength range (1.2–1.6 µm) at zero bias voltage at room temperature. For instance, at 1.55 µm, this corresponds to a responsivity of 1.15 A/W. In addition to the excellent spectral responsivity at NIR, the performance at visible and ultraviolet wavelengths remains high (EQE exceeds even 100% below 300 nm) resulting in an exceptionally wide spectral response range. The high performance is achieved by minimizing optical losses using surface nanostructures and electrical losses using both conformal atomic-layer-deposited aluminum oxide surface passivation and dielectric induced electric field -based carrier collection instead of conventional pn-junction. The dark current density of 76 µA/cm2 measured at a reverse bias of 5 V is lower than previously reported for Ge photodiodes. The presented results should have an immediate impact on the design and manufacturing of Ge photodiodes and NIR detection in general.
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| openaire: EC/H2020/101004462/EU//ATTRACT2
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Liu, H, Pasanen, T P, Fung, T H, Isometsä, J, Haarahiltunen, A, Hesse, S, Werner, L, Vähänissi, V & Savin, H 2025, 'Near-infrared germanium PIN-photodiodes with >1A/W responsivity', Light: Science & Applications, vol. 14, no. 1, 9. https://doi.org/10.1038/s41377-024-01670-4