Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy
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© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 89, Issue 1 and may be found at http://scitation.aip.org/content/aip/journal/apl/89/1/10.1063/1.2219335.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2006
Major/Subject
Mcode
Degree programme
Language
en
Pages
011911/1-3
Series
Applied Physics Letters, Volume 89, Issue 1
Abstract
We have applied a slow positron beam to study InN samples grown by metal-organic vapor-phase epitaxy with different V/III molar ratios (3300–24 000) and at different growth temperatures (550–625°C). Indium vacancies were identified in samples grown at V/III ratios below 4000. Their concentration is in the 10exp17cm−3 range. No strong dependence of vacancy concentration on the molar ratio was observed. At low V/III ratios, however, In droplets and vacancy clusters are formed near the substrate interface. The elevated growth temperature enhances the In vacancy formation, possibly due to limited sticking of In on the growth surface close to the decomposition temperature.Description
Keywords
InN, positrons, MOVPE, V/III molar ratio
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Citation
Pelli, A. & Saarinen, K. & Tuomisto, Filip & Ruffenach, S. & Briot, O. 2006. Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy. Applied Physics Letters. Volume 89, Issue 1. 011911/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2219335
