Laterally proximized aluminum tunnel junctions
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 98, issue 20, pp. 1-3
Abstract
This letter presents experiments on junctions fabricated by a technique that enables the use of high-quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to diminish the superconductivity of an aluminum dot through a clean lateral connection to a normal metal electrode. To demonstrate the effectiveness of this method, fully normal-state single electron transistors (SETs) and normal metal-insulator-superconductor (NIS) junctions applying proximized Al junctions were fabricated. The transport characteristics of the junctions were similar to those obtained from standard theoretical models of regular SETs and NIS junctions.Description
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Koski, J V, Peltonen, J T, Meschke, M & Pekola, J P 2011, 'Laterally proximized aluminum tunnel junctions', Applied Physics Letters, vol. 98, no. 20, 203501, pp. 1-3. https://doi.org/10.1063/1.3590922