(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface
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en
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2
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Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.Description
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Liu, X, Khan, R, Pasanen, H, Ali-Löytty, H, Vähänissi, V, Valden, M, Tkachenko, N V & Savin, H 2023, '(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface', Solid State Devices and Materials, 01/01/1958. < https://confit.atlas.jp/guide/event/ssdm2023/subject/C-6-04/advanced >