Catalyst-free growth of In(As)P nanowires on silicon
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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2006
Major/Subject
Mcode
Degree programme
Language
en
Pages
063119/1-3
Series
Applied Physics Letters, Volume 89, Issue 6
Abstract
The catalyst-free metal organic vapor phase epitaxialgrowth of In(As)P nanowires on silicon substrates is investigated using in situ deposited In droplets as seeds for nanowiregrowth. The thin substrate native oxide is found to play a crucial role in the nanowire formation. The structure of the nanowires is characterized by photoluminescence and electron microscopy measurements. The crystal structure of the InPnanowires is wurtzite with its c axis perpendicular to the nanowire axis. Adding arsenic precursor to the gas phase during growth results in a bimodal photoluminescence spectrum exhibiting peak at the InAsP and InP band gap energies.Description
Keywords
nanowires, photoluminescence, III‐V semiconductors, fluid drops, semiconductor growth, InP, silicon
Citation
Mattila, M. & Hakkarainen, T. & Lipsanen, Harri & Jiang, H. & Kauppinen, E. I. 2006. Catalyst-free growth of In(As)P nanowires on silicon. Applied Physics Letters. Volume 89, Issue 6. P. 063119/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2336599.
