Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes
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A4 Artikkeli konferenssijulkaisussa
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Date
2022-03-04
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Language
en
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SPIE Conference Proceedings, Volume 11997
Abstract
Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths. Another important characteristic of a high-quality photodiode is rise time which can be used to approximate bandwidth of the photodiode. We show experimentally that the rise time of black silicon photodiodes is shorter than in planar photodiodes when alumina layer with similar charge is used to make an induced junction in both. Additionally, we show that the rise time can be rather well approximated using an analytical equation, which combines Elmore delay from equivalent circuit with standard RC-delay arising from series and load resistances.Description
Keywords
black silicon, rise time, sheet resistance, silicon, photodiode
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Citation
Heinonen, J, Haarahiltunen, A, Vähänissi, V, Pasanen, T P, Savin, H & Juntunen, M A 2022, Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes . in Optical Components and Materials XIX . vol. 11997, SPIE Conference Proceedings, SPIE, Optical Components and Materials, San Francisco, California, United States, 22/01/2022 . https://doi.org/10.1117/12.2609632
