Characterization of silicon micro-optical waveguides

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.advisorSäynätjoki, Antti; TkT
dc.contributor.authorKhanna, Amit
dc.contributor.departmentDepartment of Micro- and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolFaculty of Electronics, Communications and Automationen
dc.contributor.schoolElektroniikan, tietoliikenteen ja automaation tiedekuntafi
dc.contributor.supervisorHonkanen, Seppo; Prof.
dc.date.accessioned2011-12-08T09:53:02Z
dc.date.available2011-12-08T09:53:02Z
dc.date.issued2008
dc.description.abstractIn modern electronic circuitry, electrical interconnects have not kept pace with increasing electronic processing speed. Various drawbacks of electrical domain viz. bandwidth limitation, signal delay, electromagnetic wave phenomenon propelled the use of optical fibers. Optical waveguides provide a novel solution because of the absence of these phenomena in the optical domain. Various materials like polymers, III-V semiconductor compounds, LiNbO3 etc. have been analyzed for fabricating optical waveguides. We have chosen silicon as a material for optical waveguides. Silicon is extensively used for complimentary metal oxide semiconductor (CMOS) transistor fabrication. Thus, to use silicon for fabricating optical components is highly favorable from a technological standpoint. In this thesis, we characterize silicon optical waveguides. Loss in 10µm wide hydrogenated amorphous silicon (a-Si:H) strip optical waveguides is estimated to be 1.5dB/cm and 0.1dB/cm in rib type silicon on insulator (SOI) optical waveguides. Reflectivity of Bragg mirror on a-Si:H strip waveguides is in the range 49-86%. We measured 0.5-1dB loss per etched mirror section for fundamental transverse electric (TE) and transverse magnetic (TM) modes propagating in SOI rib waveguide. A setup to measure birefringence in optical waveguides is discussed and its results are analyzed. Ellipsometry of 260nm thick layer of a-Si:H, deposited by plasma enhanced chemical vapor deposition (PECVD), is done to ascertain the material refractive index. Spectral behavior of a-Si:H waveguides using a supercontinuum source is also studied.en
dc.format.extentiv, 54
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/1105
dc.identifier.urnurn:nbn:fi:tkk-012416
dc.language.isoenen
dc.locationP1fi
dc.programmeElektroniikan ja sähkötekniikan tutkinto-ohjelmafi
dc.programme.majorPhotonicsen
dc.programme.majorOptoelektroniikkafi
dc.programme.mcodeS-104
dc.publisherHelsinki University of Technologyen
dc.publisherTeknillinen korkeakoulufi
dc.rights.accesslevelopenAccess
dc.subject.keywordsiliconen
dc.subject.keywordopticsen
dc.subject.keywordsilicon photonicsen
dc.subject.keywordattenuationen
dc.subject.keywordBragg mirroren
dc.subject.keywordbirefringenceen
dc.subject.keywordtransmission spectrumen
dc.subject.keywordamorphous siliconen
dc.subject.keywordstrip waveguidesen
dc.subject.keywordSOI waveguidesen
dc.subject.otherElectrical engineeringen
dc.titleCharacterization of silicon micro-optical waveguidesen
dc.typeG2 Pro gradu, diplomityöfi
dc.type.dcmitypetexten
dc.type.okmG2 Pro gradu, diplomityö
dc.type.ontasotDiplomityöfi
dc.type.ontasotMaster's thesisen
dc.type.publicationmasterThesis
local.aalto.digifolderAalto_33993
local.aalto.idinssi36596
local.aalto.openaccessyes
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