Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorReentilä, outi
dc.contributor.authorMattila, Marco
dc.contributor.authorSopanen, Markku
dc.contributor.authorLipsanen, Harri
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.date.accessioned2018-05-22T14:52:12Z
dc.date.available2018-05-22T14:52:12Z
dc.date.issued2006
dc.description.abstractIn situ monitoring of metal-organic vapor phase epitaxial growth of InGaAsN∕GaAs multiquantum wells is studied. The complex refractive index of InGaAsN is determined for several indium and nitrogen contents based on the fits to the reflectance curve. Taking advantage of the different effects caused by the incorporation of indium and nitrogen on the complex refractive index of InGaAsN, the InGaAsN quantum well nitrogen and indium contents are simultaneously determined in situ.en
dc.description.versionPeer revieweden
dc.format.extent3
dc.format.mimetypeapplication/pdf
dc.identifier.citationReentilä, O, Mattila, M, Sopanen, M & Lipsanen, H 2006, 'Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring', Applied Physics Letters, vol. 89, no. 23, 231919, pp. 1-3. https://doi.org/10.1063/1.2402265en
dc.identifier.doi10.1063/1.2402265
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: efa89bb6-948d-44bd-9e3a-ead33e0a3448
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/efa89bb6-948d-44bd-9e3a-ead33e0a3448
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14805359/1.2402265.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/31250
dc.identifier.urnURN:NBN:fi:aalto-201805222690
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 89, issue 23, pp. 1-3en
dc.rightsopenAccessen
dc.titleSimultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoringen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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