Defect evolution and impurity migration in Na implanted ZnO

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openAccess

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Journal Title

Journal ISSN

Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2011-11

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Mcode

Degree programme

Language

en

Pages

7
1-7

Series

PHYSICAL REVIEW B, Volume 84, issue 20

Abstract

Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na+ implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600∘C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.

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Keywords

Li, Na, positron, SIMS, ZnO

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Citation

Neuvonen , P T , Vines , L , Venkatachalapathy , V , Zubiaga , A , Tuomisto , F , Hallén , A , Svensson , B G & Kuznetsov , A Y 2011 , ' Defect evolution and impurity migration in Na implanted ZnO ' , Physical Review B , vol. 84 , no. 20 , 205202 , pp. 1-7 . https://doi.org/10.1103/PhysRevB.84.205202