Diffusion-Driven Charge Transport in Light Emitting Devices
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A2 Katsausartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Date
2017-12-12
Major/Subject
Mcode
Degree programme
Language
en
Pages
17
Series
Materials, Volume 10, issue 12, pp. 1-17
Abstract
Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics.Description
Keywords
light-emitting diodes (LEDs), diffusion injection, lateral epitaxial overgrowth, selective-area growth (SAG)
Other note
Citation
Kim, I, Kivisaari, P, Oksanen, J & Suihkonen, S 2017, ' Diffusion-Driven Charge Transport in Light Emitting Devices ', Materials, vol. 10, no. 12, 1421, pp. 1-17 . https://doi.org/10.3390/ma10121421