Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorAhopelto, J.
dc.contributor.authorSopanen, M.
dc.contributor.authorLipsanen, H.
dc.contributor.authorLourdudoss, S.
dc.contributor.authorRodriguez, E.
dc.contributor.authorHöfling, E.
dc.contributor.authorReithmaier, J.P.
dc.contributor.authorForchel, A.
dc.contributor.authorPetersson, A.
dc.contributor.authorSamuelson, L.
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.date.accessioned2025-10-08T06:36:41Z
dc.date.available2025-10-08T06:36:41Z
dc.date.issued1997
dc.description.abstractA new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.en
dc.description.versionPeer revieweden
dc.format.extent3
dc.format.mimetypeapplication/pdf
dc.identifier.citationAhopelto, J, Sopanen, M, Lipsanen, H, Lourdudoss, S, Rodriguez, E, Höfling, E, Reithmaier, J P, Forchel, A, Petersson, A & Samuelson, L 1997, 'Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs', Applied Physics Letters, vol. 70, no. 21, pp. 2828-2830. https://doi.org/10.1063/1.119015en
dc.identifier.doi10.1063/1.119015
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: 3d5a4b37-d4a2-46a3-8078-af21cb9a387d
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/3d5a4b37-d4a2-46a3-8078-af21cb9a387d
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14806620/1.119015.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/139490
dc.identifier.urnURN:NBN:fi:aalto-202510087671
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 70, issue 21, pp. 2828-2830en
dc.rightsopenAccessen
dc.subject.keywordInGaAs
dc.subject.keywordquantum wires
dc.titleMaskless selective growth of InGaAs/InP quantum wires on (100) GaAsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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