Selective growth of InGaAs on nanoscale InP islands

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors

Date

1994

Department

Department of Micro and Nanosciences

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Mcode

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Language

en

Pages

3

Series

Applied Physics Letters, Volume 65, issue 13, pp. 1662-1664

Abstract

The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

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Keywords

atomic force microscopy, metalorganic vapor phase epitaxy, photoluminescence, quantum well, scanning electron microscopy

Other note

DOI

10.1063/1.112903

Citation

Ahopelto, J, Lipsanen, H, Sopanen, M, Koljonen, T & Niemi, H 1994, 'Selective growth of InGaAs on nanoscale InP islands', Applied Physics Letters, vol. 65, no. 13, pp. 1662-1664. https://doi.org/10.1063/1.112903

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https://urn.fi/URN:NBN:fi:aalto-202510087609

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[article-cris] Sähkötekniikan korkeakoulu / ELEC