Stabilization of Ge-rich defect complexes originating from E centers in Si1- xGex:P
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© 2010 American Physical Society (APS). This is the accepted version of the following article: Kilpeläinen, S. & Kuitunen, K. & Tuomisto, Filip & Slotte, J. & Radamson, H. H. & Kuznetsov, A. Yu. 2010. Stabilization of Ge-rich defect complexes originating from E centers in Si1-xGex:P. Physical Review B. Volume 81, Issue 13. 132103/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.81.132103, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.81.132103.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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132103/1-4
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Physical Review B, Volume 81, Issue 13
Abstract
Thermal evolution of vacancy complexes was studied in P-doped ([P]=10 exp 18 cm exp −3) proton irradiated Si1−xGex with Ge contents of 10%, 20%, and 30% in the range of 250–350 °C using positron annihilation spectroscopy. The radiation damage recovers in the course of anneals but the final state differs from that in as-grown samples indicating the presence of small Ge clusters in the samples, contrary to the initially random Ge distribution. The activation energy for the annealing process was estimated to be 1.4±0.3 eV and attributed to the dissociation energy of the vacancy-phosphorus-germanium (V-P-Ge) complex.Description
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Kilpeläinen, S. & Kuitunen, K. & Tuomisto, Filip & Slotte, J. & Radamson, H. H. & Kuznetsov, A. Yu. 2010. Stabilization of Ge-rich defect complexes originating from E centers in Si1-xGex:P. Physical Review B. Volume 81, Issue 13. 132103/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.81.132103