Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2012
Major/Subject
Mcode
Degree programme
Language
en
Pages
011504/1-5
Series
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 30, Issue 1
Abstract
The plasmaetch characteristics of aluminum nitride(AlN)deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF+x and O+ chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF6 based plasmaetch applications, such as through-wafer etching, or when oxide films are not suitable.
Description
Keywords
plasma etching, etching, thin films, plasma materials processing, AIN films
Other note
Citation
Perros, Alexander & Bosund, Markus & Sajavaara, Timo & Laitinen, Mikko & Sainiemi, Lauri & Huhtio, Teppo & Lipsanen, Harri. 2012. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 30, Issue 1. P. 011504/1-5. ISSN 0734-2101 (printed). DOI: 10.1116/1.3664306.