Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorFilonovich, S.A.
dc.contributor.authorÁguas, H.
dc.contributor.authorBernacka-Wojcik, I.
dc.contributor.authorGaspar, C.
dc.contributor.authorVilarigues, M.
dc.contributor.authorSilva, L. B.
dc.contributor.authorFortunato, E.
dc.contributor.authorMartins, R.
dc.contributor.departmentMateriaalitekniikan laitosfi
dc.contributor.departmentDepartment of Materials Science and Engineeringen
dc.contributor.schoolKemian tekniikan korkeakoulufi
dc.contributor.schoolSchool of Chemical Technologyen
dc.date.accessioned2015-05-15T09:00:56Z
dc.date.available2015-05-15T09:00:56Z
dc.date.issued2009
dc.description.abstractIn this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high depositionpressure (>4 mbar), high plasma power and low substrate temperature (<200 C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical propertiesis investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystallinesilicon thin films with very high crystallinity, high value of dark conductivity (>7 (U cm)1) andhigh optical band gap (>1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanismshould proceed through a sub-surface layer mechanism that leads to silicon crystallization.The obtained films are very good candidates for application in amorphous and nanocrystalline siliconsolar cells as a p-type window layer.en
dc.description.versionPeer revieweden
dc.format.extent1253-1256
dc.format.mimetypeapplication/pdfen
dc.identifier.citationFilonovich, S.A. & Águas, H. & Bernacka-Wojcik, I. & Gaspar, C. & Vilarigues, M. & Silva, L.B. & Fortunato, E. & Martins, R. 2009. Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure. Vacuum. Volume 83, Issue 10. P. 1253-1256. ISSN 0042-207X (printed). DOI: 10.1016/j.vacuum.2009.03.017.en
dc.identifier.doi10.1016/j.vacuum.2009.03.017
dc.identifier.issn0042-207X (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/16046
dc.identifier.urnURN:NBN:fi:aalto-201505152696
dc.language.isoenen
dc.publisherElsevier BVen
dc.relation.ispartofseriesVacuumen
dc.relation.ispartofseriesVolume 83, Issue 10
dc.rights© 2009 Elsevier BV. This is the post print version of the following article: Filonovich, S.A. ; Águas, H. ; Bernacka-Wojcik, I. ; Gaspar, C. ; Vilarigues, M. ; Silva, L.B. ; Fortunato, E. ; Martins, R. 2009. Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure. Vacuum. Volume 83, Issue 10. P. 1253-1256. ISSN 0042-207X (printed). DOI: 10.1016/j.vacuum.2009.03.017, which has been published in final form at http://www.sciencedirect.com/science/article/pii/S0042207X09001419en
dc.rights.holderElsevier BV
dc.subject.keywordPECVDen
dc.subject.keywordTrimethylboronen
dc.subject.keywordnc-Si:Hen
dc.subject.keywordDopingen
dc.subject.keywordStructural propertiesen
dc.subject.otherMaterials scienceen
dc.titleHighly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressureen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionPost printen
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