Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

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Journal Title
Journal ISSN
Volume Title
School of Chemical Technology | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2009
Major/Subject
Mcode
Degree programme
Language
en
Pages
1253-1256
Series
Vacuum, Volume 83, Issue 10
Abstract
In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high depositionpressure (>4 mbar), high plasma power and low substrate temperature (<200 C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical propertiesis investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystallinesilicon thin films with very high crystallinity, high value of dark conductivity (>7 (U cm)1) andhigh optical band gap (>1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanismshould proceed through a sub-surface layer mechanism that leads to silicon crystallization.The obtained films are very good candidates for application in amorphous and nanocrystalline siliconsolar cells as a p-type window layer.
Description
Keywords
PECVD, Trimethylboron, nc-Si:H, Doping, Structural properties
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Citation
Filonovich, S.A. & Águas, H. & Bernacka-Wojcik, I. & Gaspar, C. & Vilarigues, M. & Silva, L.B. & Fortunato, E. & Martins, R. 2009. Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure. Vacuum. Volume 83, Issue 10. P. 1253-1256. ISSN 0042-207X (printed). DOI: 10.1016/j.vacuum.2009.03.017.