Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator

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Date
2019-01-01
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Mcode
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Language
en
Pages
8
273-280
Series
Numerical Methods and Applications - 9th International Conference, NMA 2018, Revised Selected Papers, Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), Volume 11189 LNCS
Abstract
From a modeling point of view, the inclusion of adequate physical phenomena is mandatory when analyzing the behavior of new transistor architectures. In particular, the high electric field across the ultra-thin insulator in aggressively scaled transistors leads to the possibility for the charge carriers in the channel to tunnel through the gate oxide via various gate leakage mechanisms (GLMs). In this work, we study the impact of trap number on gate leakage using the GLM model, which is included in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator for Fully-Depleted Silicon-On-Insulator (FDSOI) field effect transistors (FETs). The GLM code described herein considers both direct and trap-assisted tunneling. This work shows that trap attributes and dynamics can modify the device electrostatic characteristics and even play a significant role in determining the extent of GLMs.
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| openaire: EC/H2020/688101/EU//SUPERAID7
Keywords
Direct tunneling, FDSOI, Gate leakage mechanism, MS-EMC, Trap assisted tunneling
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Citation
Medina-Bailon , C , Sadi , T , Sampedro , C , Padilla , J L , Donetti , L , Georgiev , V , Gamiz , F & Asenov , A 2019 , Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator . in G Nikolov , N Kolkovska & K Georgiev (eds) , Numerical Methods and Applications - 9th International Conference, NMA 2018, Revised Selected Papers . Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) , vol. 11189 LNCS , Springer , pp. 273-280 , International Conference on Numerical Methods and Applications , Borovets , Bulgaria , 20/08/2018 . https://doi.org/10.1007/978-3-030-10692-8_30