Modeling the spectral shape of InGaAlP-based red light-emitting diodes

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorVaskuri, Annaen_US
dc.contributor.authorBaumgartner, Hansen_US
dc.contributor.authorKärhä, Petrien_US
dc.contributor.authorAndor, Gyorgyen_US
dc.contributor.authorIkonen, Erkkien_US
dc.contributor.departmentDepartment of Signal Processing and Acousticsen
dc.contributor.groupauthorMetrology Research Instituteen
dc.date.accessioned2018-08-01T13:30:53Z
dc.date.available2018-08-01T13:30:53Z
dc.date.issued2015en_US
dc.descriptionVK: Mittaustekniikka
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationVaskuri, A, Baumgartner, H, Kärhä, P, Andor, G & Ikonen, E 2015, 'Modeling the spectral shape of InGaAlP-based red light-emitting diodes', Journal of Applied Physics, vol. 118, no. 20, pp. 203103. https://doi.org/10.1063/1.4936322en
dc.identifier.doi10.1063/1.4936322en_US
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.otherPURE UUID: 8bea47b5-21fa-40c0-83a9-dfd226b2488ben_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/8bea47b5-21fa-40c0-83a9-dfd226b2488ben_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/26525675/1.4936322.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/32843
dc.identifier.urnURN:NBN:fi:aalto-201808014244
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 118, issue 20, pp. 203103en
dc.rightsopenAccessen
dc.subject.keywordInGaAlPen_US
dc.subject.keywordJunction temperatureen_US
dc.subject.keywordLEDen_US
dc.subject.keywordSpectrumen_US
dc.titleModeling the spectral shape of InGaAlP-based red light-emitting diodesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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