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In situ determination of nitrogen content in InGaAsN quantum wells
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© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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013509/1-4
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Journal of Applied Physics, Volume 100, Issue 1
Abstract
The growth of InGaAsN/GaAs multiple quantum well structures by metal-organic vapor phase epitaxy is monitored by in situ reflectometry. The nitrogen incorporation is found to depend superlinearly on the precursor flow and a threshold value for the flow is observed. By in situmeasurements of the InGaAsN quantum well samples with a fixed indium content, the change in the reflectance during the quantum wellgrowth is found to be linearly dependent on the quantum well nitrogen content. A model to determine the nitrogen content already during the growth is developed. Moreover, the field of application of in situ reflectance monitoring is extended from thick layers to thin layers, including quantum wells.
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Reentilä, O. & Mattila, M. & Knuuttila, L. & Hakkarainen, T. & Sopanen, M. & Lipsanen, Harri. 2006. In situ determination of nitrogen content in InGaAsN quantum wells. Journal of Applied Physics. Volume 100, Issue 1. P. 013509/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.2209772.