Pumping properties of the hybrid single-electron transistor in dissipative environment

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2009

Department

Department of Applied Physics

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Language

en

Pages

3

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Applied Physics Letters, Volume 95, issue 11, pp. 1-3

Abstract

Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

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Keywords

resistors, single electron transistors, superconducting materials, tunneling

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DOI

10.1063/1.3227839

Citation

Lotkhov, S V, Kemppinen, A, Kafanov, S, Pekola, J P & Zorin, A B 2009, 'Pumping properties of the hybrid single-electron transistor in dissipative environment', Applied Physics Letters, vol. 95, no. 11, 112507, pp. 1-3. https://doi.org/10.1063/1.3227839

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https://urn.fi/URN:NBN:fi:aalto-202510087697

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[article-cris] Perustieteiden korkeakoulu / SCI