Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding
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A4 Artikkeli konferenssijulkaisussa
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Date
2020-09-15
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en
Pages
5
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Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020
Abstract
The Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature wafer-level bonds. The experiments were carried out across a range of temperatures and the results cover optimized wafer-level bonding process, the formation of the bond microstructure, mechanical performance, as well as the effects of thermal aging.Description
| openaire: EC/H2020/826588/EU//APPLAUSE
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Copper, Indium, Tin
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Citation
Hotchkiss, J, Vuorinen, V, Dong, H, Ross, G, Kaaos, J, Paulasto-Krockel, M, Wernicke, T & Ponninger, A 2020, Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding . in Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020 ., 9229696, IEEE, Electronics System-Integration Technology Conference, Tonsberg, Vestfold, Norway, 15/09/2020 . https://doi.org/10.1109/ESTC48849.2020.9229696