Microscopic structure of oxygen defects in gallium arsenide
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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Physical Review B, Volume 60, issue 24, pp. R16267-R16270
Abstract
Accurate total-energy pseudopotential methods are used to study the structures, binding energies, and local vibrational modes of various models for the Ga-O-Ga defect in GaAs. We find that the previously proposed models, OAs (an off-centered substitutional oxygen in arsenic vacancy) and OI (an oxygen atom occupying a tetrahedral interstitial site), are inconsistent with experimental data. We introduce a model, (AsGa)2−OAs (two arsenic antisites and one off-centered substitutional oxygen in arsenic vacancy), the properties of which are in excellent agreement with experimental characterizations.Description
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Pesola, M, von Boehm, J, Sammalkorpi, V, Mattila, T & Nieminen, R M 1999, 'Microscopic structure of oxygen defects in gallium arsenide', Physical Review B, vol. 60, no. 24, pp. R16267-R16270. https://doi.org/10.1103/PhysRevB.60.R16267