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Point defect balance in epitaxial GaSb
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© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 105, Issue 8 and may be found at http://scitation.aip.org/content/aip/journal/apl/105/8/10.1063/1.4894473.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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082113/1-4
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Applied Physics Letters, Volume 105, Issue 8
Abstract
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.
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Segercrantz, N. & Slotte, J. & Makkonen, I. & Kujala, J. & Tuomisto, Filip & Song, Y. & Wang, S. 2014. Point defect balance in epitaxial GaSb. Applied Physics Letters. Volume 105, Issue 8. 082113/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4894473