Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2017-10-02
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Mcode
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Language
en
Pages
4
1-4
Series
APPLIED PHYSICS LETTERS, Volume 111, issue 14
Abstract
Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stress-driven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress-and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at least two distinct mechanisms can cause blistering in ALD films. Published by AIP Publishing.
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Keywords
THIN-FILMS, CRYSTAL-STRUCTURE, ALUMINUM-OXIDE, HYDROGEN, SILICON, DIFFUSION, GROWTH, WATER
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Citation
Broas , M , Jiang , H , Graff , A , Sajavaara , T , Vuorinen , V & Paulasto-Kröckel , M 2017 , ' Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films ' , Applied Physics Letters , vol. 111 , no. 14 , 141606 , pp. 1-4 . https://doi.org/10.1063/1.4994974