Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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Applied Physics Letters, Volume 111, issue 14, pp. 1-4
Abstract
Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stress-driven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress-and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at least two distinct mechanisms can cause blistering in ALD films. Published by AIP Publishing.Description
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Broas, M, Jiang, H, Graff, A, Sajavaara, T, Vuorinen, V & Paulasto-Kröckel, M 2017, 'Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films', Applied Physics Letters, vol. 111, no. 14, 141606, pp. 1-4. https://doi.org/10.1063/1.4994974