Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHakkarainen, T.
dc.contributor.authorToivonen, J.
dc.contributor.authorSopanen, Markku
dc.contributor.authorLipsanen, Harri
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-05-05T09:00:57Z
dc.date.available2015-05-05T09:00:57Z
dc.date.issued2001
dc.description.abstractSelf-assembled GaIn(N)As quantum dots are fabricated on GaAs by atmospheric pressuremetalorganic vapor-phase epitaxy using dimethylhydrazine (DMHy) precursor as a nitrogen source. The incorporation of nitrogen into the islands is observed to be negligible. However, the areal density of the islands is increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. An enhancement of the room-temperature luminescence at 1.3 μm is observed in the GaIn(N)As samples grown with DMHy.en
dc.description.versionPeer revieweden
dc.format.extent3932-3934
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHakkarainen, T. & Toivonen, J. & Sopanen, M. & Lipsanen, Harri. 2001. Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm. Applied Physics Letters. Volume 79, Issue 24. P. 3932-3934. ISSN 0003-6951 (printed). DOI: 10.1063/1.1425082.en
dc.identifier.doi10.1063/1.1425082
dc.identifier.issn0003-6951 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/15872
dc.identifier.urnURN:NBN:fi:aalto-201505042536
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 79, Issue 24
dc.rights© 2001 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/japen
dc.rights.holderAIP Publishing
dc.subject.keywordluminescenceen
dc.subject.keywordquantum dotsen
dc.subject.keywordself assemblyen
dc.subject.keywordatmospheric pressureen
dc.subject.keywordmetalorganic vapor phase epitaxyen
dc.subject.otherPhysicsen
dc.titleSelf-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µmen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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