Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2001
Major/Subject
Mcode
Degree programme
Language
en
Pages
3932-3934
Series
Applied Physics Letters, Volume 79, Issue 24
Abstract
Self-assembled GaIn(N)As quantum dots are fabricated on GaAs by atmospheric pressuremetalorganic vapor-phase epitaxy using dimethylhydrazine (DMHy) precursor as a nitrogen source. The incorporation of nitrogen into the islands is observed to be negligible. However, the areal density of the islands is increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. An enhancement of the room-temperature luminescence at 1.3 μm is observed in the GaIn(N)As samples grown with DMHy.
Description
Keywords
luminescence, quantum dots, self assembly, atmospheric pressure, metalorganic vapor phase epitaxy
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Citation
Hakkarainen, T. & Toivonen, J. & Sopanen, M. & Lipsanen, Harri. 2001. Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm. Applied Physics Letters. Volume 79, Issue 24. P. 3932-3934. ISSN 0003-6951 (printed). DOI: 10.1063/1.1425082.