Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSeppanen, H
dc.contributor.authorProzheev, I
dc.contributor.authorKauppinen, C
dc.contributor.authorSuihkonen, S
dc.contributor.authorMizohata, K
dc.contributor.authorLipsanen, H
dc.contributor.departmentHarri Lipsanen Group
dc.contributor.departmentUniversity of Helsinki
dc.contributor.departmentVTT Technical Research Centre of Finland
dc.contributor.departmentMarkku Sopanen Group
dc.contributor.departmentDepartment of Electronics and Nanoengineering
dc.date.accessioned2023-08-11T07:25:00Z
dc.date.available2023-08-11T07:25:00Z
dc.date.issued2023-09
dc.description.abstractThe effect of adding an atomic layer annealing step to a plasma-enhanced atomic layer deposition process of aluminum nitride was investigated with commonly available materials. The refractive index, crystallinity, stoichiometry, and impurity concentrations were studied from films grown from trimethylaluminum and ammonia precursors at 300∘ C on Si(111) substrates. Additional energy provided by the atomic layer annealing step during each deposition cycle was found to enhance the crystallinity and stoichiometry and increase the refractive index and film density. A polycrystalline hexagonal film with a weak c-axis orientation was obtained on substrates with and without native oxide, which is promising for applications that require high quality films at low temperatures.en
dc.description.versionPeer revieweden
dc.format.extent7
dc.format.mimetypeapplication/pdf
dc.identifier.citationSeppanen , H , Prozheev , I , Kauppinen , C , Suihkonen , S , Mizohata , K & Lipsanen , H 2023 , ' Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon ' , JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A , vol. 41 , no. 5 , 052401 . https://doi.org/10.1116/6.0002705en
dc.identifier.doi10.1116/6.0002705
dc.identifier.issn0734-2101
dc.identifier.issn1520-8559
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dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/122411
dc.identifier.urnURN:NBN:fi:aalto-202308114760
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesJOURNAL OF VACUUM SCIENCE AND TECHNOLOGY Aen
dc.relation.ispartofseriesVolume 41, issue 5en
dc.rightsopenAccessen
dc.titleEffect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on siliconen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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