Double oxidation scheme for tunnel junction fabrication
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Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2008
Major/Subject
Mcode
Degree programme
Language
en
Pages
28-31
Series
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 26, Issue 1
Abstract
The authors report a method to achieve Al–AlOx–Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68fF/μm2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.Description
Keywords
tunnel junctions, double oxidation schemes, aluminium, capacitance, electrodes
Citation
Holmqvist, T. & Meschke, M. & Pekola, Jukka. 2008. Double oxidation scheme for tunnel junction fabrication. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 26, Issue 1. 28-31. ISSN 1071-1023 (printed). DOI: 10.1116/1.2817629.
