Impact of the Effective Mass on the Mobility in Si Nanowire Transistors
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A4 Artikkeli konferenssijulkaisussa
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Date
2018-11-28
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en
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4
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SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings, Volume 2018-September, pp. 297-300
Abstract
In the simulation based research of aggressively scaled CMOS transistors, it is mandatoryto combine advanced transport simulators and quantum confinement effects with atomistic simulations which accurately reproduce the electronic structure at the nanometer scale. This work investigates the impact of cross-section dependent effective masses, obtained from atomistic simulations, on the mobility in Si nanowire transistors (NWTs). For the transport simulations, weuse the Kubo-Greenwood formalism with a set of multisubband phonon, surface roughness, and impurity scattering mechanisms.Description
| openaire: EC/H2020/688101/EU//SUPERAID7
Keywords
Impurity Scattering, KuboGreenwood Formalism, Matthiessen rule, Nanowire FETs, Phonon Scattering, Surface Roughness Scattering, Transport Effective Mass
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Citation
Medina-Bailon, C, Sadi, T, Nedjalkov, M, Lee, J, Berrada, S, Carrillo-Nunez, H, Georgiev, V P, Selberherr, S & Asenov, A 2018, Impact of the Effective Mass on the Mobility in Si Nanowire Transistors . in SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings . vol. 2018-September, 8551630, IEEE, pp. 297-300, International Conference on Simulation of Semiconductor Processes and Devices, Austin, Texas, United States, 24/09/2018 . https://doi.org/10.1109/SISPAD.2018.8551630