Graphene on silicon carbide as a basis for gas- and biosensor applications
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Nanosystems: Physics, Chemistry, Mathematics, Volume 9, issue 1, pp. 95-97
Abstract
The structural, chemical, and electronic characteristics of graphene grown by thermal decomposition of a singlecrystal SiC substrate in Ar atmosphere are presented. It is shown that this technology allows the creation of high-quality monolayer graphene films with a small fraction of bilayer graphene inclusions. The performance of graphene on SiC as a gas sensor or a biosensor was tested. The sensitivity of gas sensors to NO2 on the order of 1 ppb and that of biosensors to fluorescein with concentration on the order of 1 ng/mL and to bovine serum albumin-fluorescein conjugate with concentration on the order of 1 ng/mL were determined.Description
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Lebedev, S P, Davydov, V Y, Usachov, D Y, Smirnov, A N, Levitskii, V S, Eliseyev, I A, Guschina, E V, Dunaevskiy, M S, Vilkov, O Y, Rybkin, A G, Lebedev, A A, Novikov, S N & Makarov, Y N 2018, 'Graphene on silicon carbide as a basis for gas- and biosensor applications', Nanosystems: Physics, Chemistry, Mathematics, vol. 9, no. 1, pp. 95-97. https://doi.org/10.17586/2220-8054-2018-9-1-95-97